Graphene on SiC under silicon flux

AFM images of a bilayer graphene and line profile taken along the shown line

Graphene is a two-dimensional material, consisting of carbon atoms arranged in a honeycomb-like structure, which is considered to be one of the materials of the future. Graphene is expected to find applications in various fields and its role will be crucial in the further development of analogue and quantum electronics, optoelectronics and spintronics. Despite many efforts and ongoing research, the growth of macroscopic, high-quality material remains challenging.

After 6 years of research, BeeGraphene has developed a process that can solve the problems faced by the currently used production methods. It is based on a high-temperature graphitization of the surface of silicon carbide in an ultra-high vacuum, with an external beam of silicon atoms directed at the surface. The material produced by BeeGraphene stands out not only due to the high quality of the surface but also because of the highly ordered interface between graphene and silicon carbide.

Our method significantly limits step-bunching of silicon carbide during graphene growth (steps’ height of around 1 nm). These features result in the isotropic parameters, due to the undisturbed motion of electrons in every direction on the surface.

The lack of homogeneity of graphene, produced using competitive methods, is recognized as one of the major obstacles hindering the development of various applications of this material. Graphene offered by BeeGraphene is grown directly on an insulating surface of silicon carbide, which eliminates the need of transferring it onto different substrates and enables the possibility of wafer-scale processing. The process we use in BeeGraphene is energy-efficient, environmentally friendly and highly reproducible – we guarantee that every batch of our graphene will have almost identical properties. Our company also offers few-layers graphene, with the ABC-stacking of the adjacent layers, dedicated to the studies of superconductivity and other rare electronic phenomena. Our material is surprisingly affordable – please do not hesitate to contact us for a quotation.

Our method is protected by several pending patents: PL417804, PL431248, EP 17761570.5, US 16/314,313, KR 10-2018-7037935, JP 2018-569161

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