Graphene on silicon carbide substrate wafer with 2 inches diameter and 330 µm thickness
Graphene is present in the circle with a diameter around 3 mm smaller than the size of the SiC wafer. Properties of graphene are given after choosing a specific number of layers.
Properties of graphene regardless of the number of layers:
- Phase: monocrystal on the whole sample
- Method of production: partly reversible graphitisation of SiC (0001) under silicon atoms’ flux
- Electrical properties: doped, type n, electric charge neutral point (Dirac point) around 0.35 eV below Fermi level
Properties of a substrate:
- Material: silicon carbide (SiC)
- Phase: monocrystal
- Thickness: 330 µm (±25 µm)
- Surface orientation: <0001> (±0.5 °)
- The concentration of micropipe-type defects (MPD): 15 cm-2
- Resistivity: 1E5 Ω cm
- Band gap: 3.23 eV
- TTV / Bow / Warp: 15 µm / 25 µm / 25 µm
- Thermal conductivity along a axis in 298 K: 4.9 W/cm K
- Thermal conductivity along c axis in 298 K: 3.9 W/cm K
Characterisation:
Results of characterisation techniques such as ARPES, XPS, spectrophotometry, Raman spectrometry, and AFM are available upon request.
Anna –
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