2 inch wafer

Graphene on silicon carbide substrate wafer with 2 inches diameter and 330 µm thickness

Graphene is present in the circle with a diameter around 3 mm smaller than the size of the SiC wafer. Properties of graphene are given after choosing a specific number of layers.

Properties of graphene regardless of the number of layers:

• Phase: monocrystal on the whole sample
• Method of production: partly reversible graphitisation of SiC (0001) under silicon atoms’ flux
• Electrical properties: doped, type n, electric charge neutral point (Dirac point) around 0.35 eV below Fermi level

Properties of a substrate:

• Material: silicon carbide (SiC)
• Phase: monocrystal
• Thickness: 330 µm (±25 µm)
• Surface orientation: <0001> (±0.5 °)
• The concentration of micropipe-type defects (MPD): 15 cm^-2
• Resistivity: 1E5 Ω cm
• Band gap: 3.23 eV
• TTV / Bow / Warp: 15 µm / 25 µm / 25 µm
• Thermal conductivity along a axis in 298 K: 4.9 W/cm K
• Thermal conductivity along c axis in 298 K: 3.9 W/cm K

Characterisation:

Results of characterisation techniques such as ARPES, XPS, spectrophotometry, Raman spectrometry, and AFM are available upon request.